Lithography & nanoengineering
RAITH150-TWO
e_LiNE
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PIONEER
ionLiNE
SEM & FIB lithography kits
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Lithography & nanoengineering
e_LiNE
e_LiNE
Basic hardware features
Thermal assisted field emission gun
Cross-over free column with highest beam current density at 2 nm spot size
Laser interferometer stage with 100 mm by 100 mm travel range and 2 nm resolution achieved by closed-loop piezo-positioning
10 MHZ
DSP
-controlled digital pattern generator
Optional gas injection system,
nanomanipulators
, EDX, optical microscope, loadlock,
rotation and tilt module
,
FBMS
mode exposure
e_LiNE
specifications
Minimum line width < 20 nm
Stitching
accuracy 40 nm
Overlay
accuracy 40 nm
previous page
2/2
e_LiNE brochure
Zero stitching error using Fixed Beam Moving Stage (FBMS) mode
References
Gallery
Download Adobe Acrobat Reader
Raith Micrograph Award 2010 - final stage
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Australia
Canada
China
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Israel
Italy
Japan
Korea
Malaysia
Russia / C.I.S.
Singapore
Taiwan
Thailand
Turkey
USA
Vietnam
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